? semiconductor components industries, llc, 2007 november, 2007 - rev. 7 1 publication order number: BD241C/d BD241C (npn), bd242b (pnp), bd242c (pnp) BD241C and bd242c are preferred devices complementary silicon plastic power transistors designed for use in general purpose amplifier and switching applications. features ? collector-emitter saturation voltage - v ce = 1.2 vdc (max) @ i c = 3.0 adc ? collector-emitter sustaining voltage - v ceo(sus) = 100 vdc (min) BD241C, bd242c ? high current gain - bandwidth product f t = 3.0 mhz (min) @ i c = 500 madc ? compact to-220 ab package ? epoxy meets ul94 v-0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v ? pb-free packages are available* ??????????????????? ??????????????????? maximum ratings ????????? ????????? ????????? ??? ??? ??? ???? ???? ???? ???? ???? ???? ??? ??? ??? ????????? ????????? collector-emitter voltage ??? ??? ???? ???? ???? ???? ??? ??? ????????? ????????? ??? ??? ???? ???? ???? ???? ??? ??? ????????? ????????? ??? ??? ??????? ??????? ??? ??? ????????? ????????? ????????? ??? ??? ??? ??????? ??????? ??????? ??? ??? ??? ????????? ????????? ??? ??? ??????? ??????? ??? ??? ????????? ????????? ????????? c derate above 25 c ??? ??? ??? ??????? ??????? ??????? ??? ??? ??? c ????????? ????????? ????????? ??? ??? ??? ??????? ??????? ??????? ??? ??? ??? c ??????????????????? ??????????????????? thermal characteristics ???????????? ???????????? ???? ???? ??? ??? ??? ??? ???????????? ???????????? thermal resistance, junction-to-ambient ???? ???? ja ??? ??? ??? ??? c/w ???????????? ???????????? ???? ???? jc ??? ??? ??? ??? c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information BD241C to-220ab to-220ab case 221a-09 style 1 50 units/rail 3 1 power transistors complementary silicon 3 amp 80-100 volts 40 watts 2 marking diagram bd24xx = device code xx = 1c, 2b, or 2c a = assembly location y = year ww = work week g = pb-free package http://onsemi.com bd242b to-220ab 50 units/rail ayww bd24xxg bd242c to-220ab 50 units/rail BD241Cg to-220ab (pb-free) 50 units/rail bd242bg to-220ab (pb-free) 50 units/rail bd242cg to-220ab (pb-free) 50 units/rail preferred devices are recommended choices for future use and best overall value.
BD241C (npn), bd242b (pnp), bd242c (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? collector-emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) bd242b BD241C, bd242c ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? adc ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? ??????????????????????? current gain - bandwidth product (note 2) (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ??? 300 s, duty cycle 2.0%. 2. f t = |h fe | ? f test . 40 30 20 10 0 0 20 40 60 80 100 120 140 160 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts)
BD241C (npn), bd242b (pnp), bd242c (pnp) http://onsemi.com 3 2.0 0.03 i c , collector current (amp) t, time (s) 1.0 0.7 0.5 0.3 0.1 0.07 0.02 0.05 0.1 0.3 0.5 0.7 1.0 3.0 t d @ v be(off) = 2.0 v i c /i b = 10 t j = 25 c t r @ v cc = 30 v t r @ v cc = 10 v 0.07 0.03 0.05 figure 2. switching time equivalent circuit figure 3. turn-on time approx + 11 v turn\on pulse v in 0 t 1 v eb(off) approx - 9.0 v turn\off pulse v in t 3 t 2 approx + 11 v v cc scope r k c jd c eb - 4.0 v t 1 7.0 ns 100 t 2 500 s t 3 15 ns duty cycle 2.0% v in r l figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 z jc (t) = r(t) r jc r jc = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 r(t), transient thermal resistance (normalized) v ce , collector-emitter voltage (volts ) second breakdown limited @ t j 150 c thermal limitation @ t c = 25 c bonding wire limited curves apply below rated v ceo 10 5.0 figure 5. active region safe operating area i c , collector current (amp) 5.0 1.0 0.1 10 20 50 100 BD241C, bd242c 5.0 ms 100 s 1.0 ms 0.2 2.0 0.5 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c - v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c, t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values l ess than the limitations imposed by second breakdown.
BD241C (npn), bd242b (pnp), bd242c (pnp) http://onsemi.com 4 3.0 0.03 figure 6. turn-off time i c , collector current (amp) t f @ v cc = 30 v t, time (s) 2.0 1.0 0.5 0.3 0.2 0.1 0.05 0.03 0.05 0.07 0.1 0.2 0.5 1.0 2.0 3.0 t f @ v cc = 10 v i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t s 0.3 0.7 0.07 0.7 300 0.1 figure 7. capacitance v r , reverse voltage (volts) 30 1.0 2.0 3.0 5.0 20 30 40 10 0.2 0.3 0.5 capacitance (pf) 200 100 70 50 t j = + 25 c c eb c cb v ce , collector-emitter voltage (volts) 500 0.03 5.0 0.05 0.07 0.1 0.3 0.5 1.0 3.0 100 50 30 10 300 70 t j = 150 c 25 c -55 c v ce = 2.0 v 0.7 7.0 figure 8. dc current gain i c , collector current (amp) figure 9. collector saturation region 2.0 1.0 i b , base current (ma) 0 2.0 5.0 10 20 50 100 200 500 1000 1.6 1.2 0.8 0.4 i c = 0.3 a t j = 25 c 1.0 a 3.0 a h fe , dc current gain 1.4 0.003 i c , collector current (amps) 0.01 0.020.03 0.1 0.2 0.5 1.0 2.0 3.0 0.8 0.6 0.4 0.2 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v, voltage (volts) figure 10. ?on? voltages +2.5 0.003 figure 11. temperature coefficients i c , collector current (amp) 0.01 0.02 0.05 0.1 0.2 0.3 1.0 2.0 3.0 v , temperature coefficients (mv/ c) +2.0 +1.5 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 vb for v be * vc for v ce(sat) *applies for i c /i b 5.0 t j = - 65 c to + 150 c 0.005 0.3 0.05 1.2 1.0 v be @ v ce = 2.0 v +1.0 0.5 0.005
BD241C (npn), bd242b (pnp), bd242c (pnp) http://onsemi.com 5 10 3 -0.4 figure 12. collector cut-off region v be , base-emitter voltage (volts) 10 2 10 1 10 0 10 -1 , collector current (a) i c 10 -2 10 -3 -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 v ce = 30 v t j = 150 c 100 c 25 c reverse forward i ces 10 7 figure 13. effects of base-emitter resistance t j , junction temperature ( c) 20 40 60 80 100 120 140 160 10 6 10 5 10 4 10 3 10 2 r be , external base-emitter resistance (ohm v ce = 30 v i c = 10 x i ces i c i ces (typical i ces values obtained from figure 12) i c = 2 x i ces
BD241C (npn), bd242b (pnp), bd242c (pnp) http://onsemi.com 6 package dimensions to-220 case 221a-09 issue ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane -t- c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 BD241C/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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